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FCPF250N65S3L1 ? n-channel superfet ? iii mosfet www.onsemi.com semiconductor components industries, llc, 2017 publication order number: may, 2017, rev. 1.0 FCPF250N65S3L1/d 1 FCPF250N65S3L1 n-channel superfet ? iii mosfet 650 v, 12 a, 250 m features ? 700 v @ t j = 150 o c ?typ. r ds(on) = 210 m ? ultra low gate charge (typ. q g = 24 nc) ? low effective output capacitance (typ. c oss(eff.) = 248 pf) ? 100% avalanche tested ? rohs compliant applications ? computing / display power supplies ? telecom / server power supplies ? industrial power supplies description superfet ? iii mosfet is on semiconductor?s brand-new high voltage super-junction (sj) mosf et family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performanc e. this advanced technology is tailored to minimize c onduction loss, provide superior switching performance, and withstand extreme dv/dt rate. consequently, superfet iii mosf et is very suitable for various power system for mini aturization and higher efficiency. to-220f g d s g s d absolute maximum ratings t c = 25 o c unless otherwise noted. thermal characteristics symbol parameter FCPF250N65S3L1 unit v dss drain to source voltage 650 v v gss gate to source voltage - dc 30 v - ac (f > 1 hz) 30 v i d drain current - continuous (t c = 25 o c) 12* a - continuous (t c = 100 o c) 7.6* i dm drain current - pulsed (note 1) 30* a e as single pulsed avalanche energy (note 2) 57 mj i as avalanche current (note 1) 2.3 a e ar repetitive avalanche energy (note 1) 0.31 mj dv/dt mosfet dv/dt 100 v/ns peak diode recovery dv/dt (note 3) 20 p d power dissipation (t c = 25 o c) 31 w - derate above 25 o c0.25w/ o c t j , t stg operating and storage temperature range -55 to +150 o c t l maximum lead temperature for soldering, 1/8? from case for 5 seconds 300 o c symbol parameter FCPF250N65S3L1 unit r jc thermal resistance, junction to case, max. 4.07 o c/w r ja thermal resistance, junction to ambient, max. 62.5 *drain current limited by maximum junction temperature .
FCPF250N65S3L1 ? n-channel superfet ? iii mosfet www.onsemi.com 2 package marking and ordering information electrical characteristics t c = 25 o c unless otherwise noted. off characteristics on characteristics dynamic characteristics switching characteristics source-drain diode characteristics part number top mark package packing method reel size tape width quantity FCPF250N65S3L1 fcpf250n65s3 to-220f tube n/a n/a 50 units symbol parameter test conditions min. typ. max. unit bv dss drain to source breakdown voltage v gs = 0 v, i d = 1 ma, t j = 25 c 650 - - v v gs = 0 v, i d = 1 ma, t j = 150 c 700 - - v bv dss / t j breakdown voltage temperature coefficient i d = 1 ma, referenced to 25 o c - 0.67 - v/ o c i dss zero gate voltage drain current v ds = 650 v, v gs = 0 v - - 1 a v ds = 520 v, t c = 125 o c - 0.77 - i gss gate to body leakage current v gs = 30 v, v ds = 0 v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 1.2 ma 2.5 - 4.5 v r ds(on) static drain to source on resistance v gs = 10 v, i d = 6 a - 210 250 m g fs forward transconductance v ds = 20 v, i d = 6 a - 7.4 - s c iss input capacitance v ds = 400 v, v gs = 0 v, f = 1 mhz -1010-pf c oss output capacitance - 25 - pf c oss(eff.) effective output capacitance v ds = 0 v to 400 v, v gs = 0 v - 248 - pf c oss(er.) energy related output capacitance v ds = 0 v to 400 v, v gs = 0 v - 33 - pf q g(tot) total gate charge at 10v v ds = 400 v, i d = 6 a, v gs = 10 v (note 4) -24-nc q gs gate to source gate charge - 6.1 - nc q gd gate to drain ?miller? charge - 9.7 - nc esr equivalent series resistance f = 1 mhz - 8.7 - t d(on) turn-on delay time v dd = 400 v, i d = 6 a, v gs = 10 v, r g = 4.7 (note 4) -18-ns t r turn-on rise time - 18 - ns t d(off) turn-off delay time - 49 - ns t f turn-off fall time - 12 - ns i s maximum continuous drain to source diode forward current - - 12 a i sm maximum pulsed drain to source diode forward current - - 30 a v sd drain to source diode forward voltage v gs = 0 v, i sd = 6 a - - 1.2 v t rr reverse recovery time v gs = 0 v, i sd = 6 a, di f /dt = 100 a/ s - 251 - ns q rr reverse recovery charge - 3.4 - c notes: 1. repetitive rating: pulse-width limited by maximum junction temperature. 2. i as = 2.3 a, r g = 25 , starting t j = 25 c. 3. i sd 6 a, di/dt 200 a/ s, v dd 400 v, starting t j = 25 c. 4. essentially independent of operating temperature typical characteristics.
FCPF250N65S3L1 ? n-channel superfet ? iii mosfet www.onsemi.com 3 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 0.2 1 10 20 0.1 1 10 40 *notes: 1. 250 s pulse test 2. t c = 25 o c i d , drain current[a] v ds , drain-source voltage[v] v gs = 10.0v 8.0v 7.0v 6.5v 6.0v 5.5v 3456789 1 10 30 -55 o c 150 o c *notes: 1. v ds = 20v 2. 250 s pulse test 25 o c i d , drain current[a] v gs , gate-source voltage[v] 0 10203040 0.0 0.2 0.4 0.6 0.8 *note: t c = 25 o c v gs = 20v v gs = 10v r ds(on) , drain-source on-resistance [ ] i d , drain current [a] 0.0 0.5 1.0 1.5 0.001 0.01 0.1 1 10 100 *notes: 1. v gs = 0v 2. 250 s pulse test 150 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c -55 o c 0 6 12 18 24 30 0 2 4 6 8 10 v ds = 400v v ds = 130v *note: i d = 6a v gs , gate-source voltage [v] q g , total gate charge [nc] 10 -1 10 0 10 1 10 2 10 3 10 -1 10 0 10 1 10 2 10 3 10 4 10 5 c oss c iss c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v]
FCPF250N65S3L1 ? n-channel superfet ? iii mosfet www.onsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case t emperature figure 11. eoss vs. drain to source voltage -50 0 50 100 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 *notes: 1. v gs = 10v 2. i d = 6a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c] -50 0 50 100 150 0.8 0.9 1.0 1.1 1.2 *notes: 1. v gs = 0v 2. i d = 10ma bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c] 1 10 100 1000 0.01 0.1 1 10 100 10 s 100 s 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse dc 25 50 75 100 125 150 0 5 10 15 i d , drain current [a] t c , case temperature [ o c] 0 130 260 390 520 650 0 2 4 6 e oss [ j] v ds , drain to source voltage [v]
FCPF250N65S3L1 ? n-channel superfet ? iii mosfet www.onsemi.com 5 typical performance characteristics (continued) figure 12. transient thermal response curve 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 0.001 0.01 0.1 1 2 single pulse duty cycle-descending order r(t), normalized effective transient thermal resistance t, rectangular pulse duration (sec) d = 0.5 0.2 0.1 0.05 0.02 0.01 notes: z jc (t) = r(t) x r jc r jc = 4.07 o c/w duty cycle, d = t 1 / t 2 peak t j = p dm x z jc (t) + t c p dm t 1 t 2
FCPF250N65S3L1 ? n-channel superfet ? iii mosfet www.onsemi.com 6 figure 13. gate charge test circuit & waveform figure 14. resistive switch ing test circuit & waveforms figure 15. unclamped inductive switching test circuit & waveforms v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs v gs v gs i g = const.
FCPF250N65S3L1 ? n-channel superfet ? iii mosfet www.onsemi.com 7 figure 16. peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
4.60 4.30 10.70 10.30 3.00 2.60 3.40 3.00 10.30 9.80 0.90 0.50 (3x) 2.74 2.34 (2x) 2.14 3.30 2.70 b 1.20 1.00 1.20 0.90 (2x) b 19.00 17.70 1 3 0.50 m a a 2.90 2.50 b 15.70 15.00 2.70 2.30 b 0.60 0.40 6.60 6.20 1 x 45 notes: a. except where noted conforms to eiaj sc91a. b does not comply eiaj std. value. c. all dimensions are in millimeters. d. dimensions are exclusive of burrs, mold flash and tie bar protrusions. e. dimension and tolerance as per asme y14.5-2009. f. drawing file name: to220v03rev1 g. fairchild semiconductor
www. onsemi.com 1 on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent ? marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does o n semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semiconductor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typic als? must be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the right s of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semicondu ctor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distrib utors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 www.onsemi.com literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative ? semiconductor components industries, llc
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